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Proceedings Paper

Transmission electron microscopy, photoluminescence, and capacitance spectroscopy on GaAs/Si grown by metal organic chemical vapor deposition
Author(s): Georges E. Bremond; Hicham Said; Gerard Guillot; Jaafar Meddeb; M. Pitaval; Nasser Draidia; Rozette Azoulay
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Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24436
Show Author Affiliations
Georges E. Bremond, INSA Lyon (France)
Hicham Said, INSA Lyon (France)
Gerard Guillot, INSA Lyon (France)
Jaafar Meddeb, Univ. Claude Bernard Lyon I (France)
M. Pitaval, Univ. Claude Bernard Lyon I (France)
Nasser Draidia, Lab. de Bagneux/CNET (France)
Rozette Azoulay, Lab. de Bagneux/CNET (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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