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Proceedings Paper

Localization of hot spots in silicon devices with a laser scanning microscope
Author(s): Harald Bergner; A. Krause; Uwe Stamm
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Paper Abstract

A novel method is demonstrated which allows to localize and clearly identify hot spots in integrated circuits with high spatial resolu-'' tion. The method is based on the optical beam induced current technique (OBIC) using a laser scanning microscope with infrared illumination. Due to the OBIC contrast thermal defects can be recognized in a difference image of two OBIC images measured at different background temperatures of the circuit. The method is applied to thermal mapping of a CMOS NOR-gate. Calibrating the OBIC signal in dependence on the circuit temperature the absolute temperature of the hot spot is deter mined.

Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24435
Show Author Affiliations
Harald Bergner, Friedrich-Schiller-Univ. Jena (Germany)
A. Krause, Friedrich-Schiller-Univ. Jena (Germany)
Uwe Stamm, Friedrich-Schiller-Univ. Jena (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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