Share Email Print
cover

Proceedings Paper

Photoluminescence and deep-level transient spectroscopy of DX-centers in selectively silicon-doped GaAs-AlAs superlattices
Author(s): Soraya Ababou; Taha Benyattou; Jean J. Marchand; Louis Mayet; Gerard Guillot; Francis Mollot; Richard Planel
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Details

Date Published: 1 March 1991
PDF: 6 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24433
Show Author Affiliations
Soraya Ababou, INSA Lyon (France)
Taha Benyattou, INSA Lyon (France)
Jean J. Marchand, INSA Lyon (France)
Louis Mayet, INSA Lyon (France)
Gerard Guillot, INSA Lyon (France)
Francis Mollot, Lab. de Microstructures et de Microelectronique/CNRS (France)
Richard Planel, Lab. de Microstructures et de Microelectronique/CNRS (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

© SPIE. Terms of Use
Back to Top