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Proceedings Paper

Photoluminescence and deep-level transient spectroscopy of DX-centers in selectively silicon-doped GaAs-AlAs superlattices
Author(s): Soraya Ababou; Taha Benyattou; Jean J. Marchand; Louis Mayet; Gerard Guillot; Francis Mollot; Richard Planel
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Paper Abstract

Deep level transient spectroscopy (DLTS) and photoluminescence (PL) measurements are used to characterize short period selectively or uniformly Si-doped GaAs-AlAs superlattices (SLs) grown by molecular beam epitaxy at two different temperatures. DLTS measurements show the presence of DX center with an apparent activation energy of 0. 42eV and a trap concentration which decreases as the growth temperature is lowered. From an analysis of the DX concentration and binding energy we show that this center is mainly located in the AlAs layers. The high growth temperature enhances the silicon diffusion from the GaAs wells towards the AlAs layers which allows us to detect the DX even when only the GaAs layers are doped. The PL measurements performed on the near band edge show different transitions. No deep luminescence in the near infra-red spectrum is observed on these MBE layers despite the high DX concentration.

Paper Details

Date Published: 1 March 1991
PDF: 6 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24433
Show Author Affiliations
Soraya Ababou, INSA Lyon (France)
Taha Benyattou, INSA Lyon (France)
Jean J. Marchand, INSA Lyon (France)
Louis Mayet, INSA Lyon (France)
Gerard Guillot, INSA Lyon (France)
Francis Mollot, Lab. de Microstructures et de Microelectronique/CNRS (France)
Richard Planel, Lab. de Microstructures et de Microelectronique/CNRS (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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