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Proceedings Paper

Growth and properties of GaxIn1-xAs (x
Author(s): MingZe Du; Jinshan Yuan; Yixin Jin; Tianming Zhou; Jiang Hong; ChunRong Hong; BaoLin Zhang
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Paper Abstract

Ga As (x 47) epitayers tatticemismatched to laP and steptike composition tayers of InAs (O 61) were prepared by atmospheric pressure metatorganic chemical vapor deposition (MOCVD) with a horizontal reactor using trimethytindiu. m (TMIn) trimethylgalliu. m ( TMGa) arsine (AsH and phosphine (PH as the source materials. The alloy compositions were measured by the Electronic Probe (EP) and the XRay Diffraction (XRD) . The crystalline quality of the epilayer was detected by the Xray double diffraction and the composition depth profile of Ga. InAs/InAsP1 InP was measured by secondary ion mass spectrometry (SIMS)respectively. It indicated that the introduction of steplike composition layers was an effective method for decreasing the latticemismatch between layers and improving the crystalline quality.

Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24432
Show Author Affiliations
MingZe Du, ChangChun Institute of Physics (China)
Jinshan Yuan, ChangChun Institute of Physics (China)
Yixin Jin, ChangChun Institute of Physics (China)
Tianming Zhou, ChangChun Institute of Physics (China)
Jiang Hong, ChangChun Institute of Physics (China)
ChunRong Hong, ChangChun Institute of Physics (China)
BaoLin Zhang, ChangChun Institute of Physics (China)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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