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Proceedings Paper

Type-II heterojunctions in GaSb-InAs solid solutions: physics and applications
Author(s): Maya P. Mikhailova; Alexej N. Baranov; Albert N. Imenkov; Yury P. Yakovlev
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Paper Abstract

Staggered-''lineup type II heterojunctions have been realized in Ga In As Sb solid solutions lattice matched. to GaSb as well as ones depending on alloy composition (x1 O. 23 or XinO8O)i n Unique features of type II heterojunctions due to carrier localization and spatial separation on the interface have been experixnen tally observed by electroluminescence generation of coherent radiation and photocurrent gain. Distinctive hallmarks of the narrow-''gap GaSbGaInAsSb heterojunctions have been considered in connection with CV 1-. V and spectral response experiments. Energy band schemes of such structures have been analized. GaSbGaInAsSb heterojunctions with x 0. 80 were found to be type II misaligned ones. Novel optoelectronic devices for midIR spectral range of 1 (lasers LID''s and high-. speed photodiodes) were developed on the base of GaSb-GaInAsSb heterojunctions.

Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24430
Show Author Affiliations
Maya P. Mikhailova, A. F. Ioffe Physical Technical Institute (Russia)
Alexej N. Baranov, A. F. Ioffe Physical Technical Institute (Russia)
Albert N. Imenkov, A. F. Ioffe Physical Technical Institute (Russia)
Yury P. Yakovlev, A. F. Ioffe Physical Technical Institute (Russia)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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