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Proceedings Paper

Growth by liquid phase epitaxy and characterization of GaInAsSb and InAsSbP alloys for mid-infrared applications (2-3 um)
Author(s): Eric Tournie; J. L. Lazzari; Habib Mani; F. Pitard; Claude L. Alibert; Andre Francis Joullie
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Paper Abstract

We present the liquid phase epitaxy growth (LPE) of GaInAsSb/( 1 00) GaSb and InAsSbP/( 1 00) InAs near their miscibility gap (MG) boundaries. The conditions f or growing latticematched layers of optoelectronic quality are given. The cut-off wavelength limitations due to the MG are : 2. 4 p. m for GaInAsSb and 2. 6 p. m for lnAsSbP. As an example of application results are presented on LPE grown photodiodes based on these quaternary alloys. 1 -

Paper Details

Date Published: 1 March 1991
PDF: 16 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24427
Show Author Affiliations
Eric Tournie, Univ. de Montpellier II, Sciences et Techniques du Languedoc (France)
J. L. Lazzari, Univ. de Montpellier II, Sciences et Techniques du Languedoc (France)
Habib Mani, Lab. de Bagneux/CNET (Canada)
F. Pitard, Univ. de Montpellier II, Sciences et Techniques du Languedoc (France)
Claude L. Alibert, Univ. de Montpellier II, Sciences et Techniques du Languedoc (France)
Andre Francis Joullie, Univ. de Montpellier II, Sciences et Techniques du Languedoc (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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