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Proceedings Paper

Multilayer InSb diodes grown by molecular beam epitaxy for near-ambient temperature operation
Author(s): Tim Ashley; A. B. Dean; Charles Thomas Elliott; M. R. Houlton; C. F. McConville; Howard A. Tarry; Colin R. Whitehouse
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Paper Abstract

InSb and related ternary alloys have many potential applications in addition to the conventional one of infrared detection provided that near ambient temperature operation can be achieved. The growth by MBE of n-type and p-type InSb has been established using silicon and beryllium dopants respectively. Multilayer diode structures have been studied up to 300K in order to determine carrier generation mechanisms and examine concepts for ambient temperature operation.

Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24426
Show Author Affiliations
Tim Ashley, Royal Signals and Radar Establishment (United Kingdom)
A. B. Dean, Royal Signals and Radar Establishment (United Kingdom)
Charles Thomas Elliott, Royal Signals and Radar Establishment (United Kingdom)
M. R. Houlton, Royal Signals and Radar Establishment (United Kingdom)
C. F. McConville, Royal Signals and Radar Establishment (United Kingdom)
Howard A. Tarry, Royal Signals and Radar Establishment (United Kingdom)
Colin R. Whitehouse, Royal Signals and Radar Establishment (United Kingdom)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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