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Proceedings Paper

Multilayer InSb diodes grown by molecular beam epitaxy for near-ambient temperature operation
Author(s): Tim Ashley; A. B. Dean; Charles Thomas Elliott; M. R. Houlton; C. F. McConville; Howard A. Tarry; Colin R. Whitehouse
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Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24426
Show Author Affiliations
Tim Ashley, Royal Signals and Radar Establishment (United Kingdom)
A. B. Dean, Royal Signals and Radar Establishment (United Kingdom)
Charles Thomas Elliott, Royal Signals and Radar Establishment (United Kingdom)
M. R. Houlton, Royal Signals and Radar Establishment (United Kingdom)
C. F. McConville, Royal Signals and Radar Establishment (United Kingdom)
Howard A. Tarry, Royal Signals and Radar Establishment (United Kingdom)
Colin R. Whitehouse, Royal Signals and Radar Establishment (United Kingdom)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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