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Proceedings Paper

Reactive ion etching of InP and its optical assessment
Author(s): Roderick W. MacLeod; Cliva M. Sotomayor-Torres; Manijeh Razeghi; C. R. Stanley; Chris D. W. Wilkinson
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Paper Abstract

A method for reactive ion etching (RIE) InP has been developed using CH4/H2 which allows the fabrication of dots of 6Onm diameter and 200nm height with good aspect ratio. The effect of the etch on the optical quality of the InP surface is investigated by phonon Raman scattering and 5K luminescence.

Paper Details

Date Published: 1 March 1991
PDF: 6 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24418
Show Author Affiliations
Roderick W. MacLeod, Univ. of Glasgow (United Kingdom)
Cliva M. Sotomayor-Torres, Univ. of Glasgow and Thomson-CSF (Germany)
Manijeh Razeghi, Thomson-CSF (United States)
C. R. Stanley, Univ. of Glasgow (United Kingdom)
Chris D. W. Wilkinson, Univ. of Glasgow (United Kingdom)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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