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Proceedings Paper

Application of epitaxial lift-off to optoelectronic material studies
Author(s): Garth L. Price; Brian F. Usher
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Paper Abstract

Work in progress and completed studies in epitaxial liftoff by a number of workers in these Laboratories are reviewed. The areas include waxless chemical release on patterned substrates the liftoff of optical filters and of optical modulators for potential integration with silicon and the regrowth of unstrained films of arbitrary lattice constant on strained MBE grown InGaAs layers which have been chemically released from the underlying substrate. An extremely strong excitonic absorption has been discovered in 1pm GaAs liftoff films and strain measurements on these films have given hydrostatic and uniaxial deformation potentials.

Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24417
Show Author Affiliations
Garth L. Price, Telecom Australia Research Labs. (Australia)
Brian F. Usher, Telecom Australia Research Labs. (Australia)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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