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Proceedings Paper

Electronic properties of Si-doped nipi structures in GaAs
Author(s): C. Y. Fong; R. F. Gallup; Jeffrey S. Nelson
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Paper Details

Date Published: 1 March 1991
PDF: 10 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24414
Show Author Affiliations
C. Y. Fong, Univ. of California/Davis (United States)
R. F. Gallup, Univ. of California/Davis (United States)
Jeffrey S. Nelson, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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