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Proceedings Paper

Electronic properties of Si-doped nipi structures in GaAs
Author(s): C. Y. Fong; R. F. Gallup; Jeffrey S. Nelson
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Paper Abstract

The electronic properties of heavily and orderly Si-doped nipi structures in GaAs are studied theoretically using the abinitio self-consistent pseudopotential method within the local density approximation. Two nipi configurations are considered. Besides investigating the nature of the impurity-related band edge states the xy-planar-averaged local ionic and self-consistent potentials are also analyzed. The screening effect of the host crystal on the doping induced potential is found to be small. The effects of the doping induced electric field and the strain due to dopings are also examined.

Paper Details

Date Published: 1 March 1991
PDF: 10 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24414
Show Author Affiliations
C. Y. Fong, Univ. of California/Davis (United States)
R. F. Gallup, Univ. of California/Davis (United States)
Jeffrey S. Nelson, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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