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Proceedings Paper

Measurements of the InxGa1-xAs/GaAs critical layer thickness
Author(s): Thorvald G. Andersson; M. J. Ekenstedt; Vladimir D. Kulakovskii; S. M. Wang; J. Y. Yao
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Paper Abstract

The critical layer thickness (CLT) for InxGaixAs/GaAs has been studied by photoluminescence transmission electron microscopy and reflection high energy electron diffraction with the composition x and growth temperatures as parameters. The obtained values of CLT have been compared with theoretical models. None of them coincide with the experimental results. For x 0. 3 the CLT varies rapidly with x while the dependence is slow for x 3. Here the CLT is small typically a few monolayers. The CLT is governed by dislocation generation for x 0. 3 and by the onset of three dimensional growth for x 3.

Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24412
Show Author Affiliations
Thorvald G. Andersson, Chalmers Univ. of Technology (Sweden)
M. J. Ekenstedt, Chalmers Univ. of Technology (Sweden)
Vladimir D. Kulakovskii, Chalmers Univ. of Technology (Sweden)
S. M. Wang, Chalmers Univ. of Technology (Sweden)
J. Y. Yao, Chalmers Univ. of Technology (Sweden)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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