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Proceedings Paper

Measurements of the InxGa1-xAs/GaAs critical layer thickness
Author(s): Thorvald G. Andersson; M. J. Ekenstedt; Vladimir D. Kulakovskii; S. M. Wang; J. Y. Yao
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Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24412
Show Author Affiliations
Thorvald G. Andersson, Chalmers Univ. of Technology (Sweden)
M. J. Ekenstedt, Chalmers Univ. of Technology (Sweden)
Vladimir D. Kulakovskii, Chalmers Univ. of Technology (Sweden)
S. M. Wang, Chalmers Univ. of Technology (Sweden)
J. Y. Yao, Chalmers Univ. of Technology (Sweden)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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