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Proceedings Paper

Optical properties of InGaAs/InP strained quantum wells
Author(s): Richard A. Abram; Andrew C. G. Wood; D. J. Robbins
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Paper Details

Date Published: 1 March 1991
PDF: 10 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24411
Show Author Affiliations
Richard A. Abram, Univ. of Durham (United Kingdom)
Andrew C. G. Wood, Univ. of Durham (United Kingdom)
D. J. Robbins, Plessey Research Caswell Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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