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Proceedings Paper

Strained semiconductors and heterostructures: synthesis and applications
Author(s): Pallab Bhattacharya; Jasprit Singh
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Paper Abstract

Strained semiconductors offer an additional degree of freedom in the tailoring of material properties. The growth of strained layers particularly for large degrees of misfits by techniques such as MBE and MOCVD are not particularly well understood. In the case of biaxial compressive strain it is apparent that above 2 misfit growth proceeds in a 3-D island mode. Biaxial strain in pseudomorphic structures dramatically alters the bandstructure. As a result the transport and optical properties are changed. The properties of strained MQW lasers modulators and MODFETs will be described and discussed. I.

Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24410
Show Author Affiliations
Pallab Bhattacharya, Univ. of Michigan (United States)
Jasprit Singh, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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