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Proceedings Paper

Growth and characterization of ZnSe and ZnTe grown on GaAs by hot-wall epitaxy
Author(s): Kurt Hingerl; Andreas Pesek; Helmut Sitter; Alois Krost; Dietrich R. T. Zahn; W. Richter; Gotthard Kudlek; Juergen Gutowski
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Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24408
Show Author Affiliations
Kurt Hingerl, Johannes Kepler Univ. Linz (Austria)
Andreas Pesek, Johannes Kepler Univ. Linz (Austria)
Helmut Sitter, Johannes Kepler Univ. Linz (Austria)
Alois Krost, Technical Univ. Berlin (Germany)
Dietrich R. T. Zahn, Technical Univ. Berlin (Germany)
W. Richter, Technical Univ. Berlin (Germany)
Gotthard Kudlek, Technical Univ. Berlin (Germany)
Juergen Gutowski, Technical Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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