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Proceedings Paper

Low-substrate temperature molecular beam epitaxy growth and thermal stability of strained InGaAs/GaAs single-quantum-wells
Author(s): Boris S. Elman; Emil S. Koteles; Paul Melman; Mark A. Rothman
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Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24407
Show Author Affiliations
Boris S. Elman, GTE Labs. Inc. (United States)
Emil S. Koteles, GTE Labs. Inc. (United States)
Paul Melman, GTE Labs. Inc. (United States)
Mark A. Rothman, GTE Labs. Inc. (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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