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Proceedings Paper

Molecular beam epitaxy/liquid phase epitaxy hybrid growth for GaAs-LED on Si
Author(s): Tetsuroh Minemura; Yuji Yazawa; J. Asano; T. Unno
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Paper Abstract

A hybrid growth of GaAs on Si combined molecular beam epitaxy (MBE) with subsequent liquid phase epitaxy (LPE) has been carried out to fabricate light emitting diodes (LED''s) on Si. The formation of the dissolution pits which was a serious problem for this method could be suppressed by making the formation mechanism clear. The optimum hybrid-grown GaAs on Si had better crystallinity than MBE-grown one. It was also suggested that further improvement in the crystallinity of MBEgrown GaAs layers led to higher quality of hybrid-grown ones. LED''s have been fabricated using the optimum hybrid-grown GaAa-on-Si substrates. They had higher potential to achieve high light intensity and stability compared with those fabricated by MBE-grown ones. The better characteristics are attributed to higher crystallinity of the hybrid-grown GaAs on Si.

Paper Details

Date Published: 1 March 1991
PDF: 10 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24406
Show Author Affiliations
Tetsuroh Minemura, Hitachi, Ltd. (Japan)
Yuji Yazawa, Hitachi, Ltd. (Japan)
J. Asano, Hitachi, Ltd. (Japan)
T. Unno, Hitachi Cable, Ltd. (Japan)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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