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Proceedings Paper

Study of properties of a-Si1-xGex:H prepared by SAP-CVD method
Author(s): Yi-Ming Wang; Lian-hua Jing; Da-wen Pang
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Paper Abstract

The Sputtering-Assisted Plasma (SAP)-Chemieal Vapour Deposition (CYD) method was used to prepare in a gas mixture of SIH4 + Ar + H2 a-Sii_Ge : H with different composition and optical gap between 0. 98 and 1. 85 eV. From experimental study of samples optimal processing conditions were obtained and a model of interactions between H and the growing surface was presented. Study of the properties of samples shew that hydrogenated a-Si Ge alloy prepared by SAP-CVD technique is superior in some respects with regard to optoelectronic effect and deterioration of the performance related with in-crease of Ge content.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24405
Show Author Affiliations
Yi-Ming Wang, Beijing Polytechnic Univ. (China)
Lian-hua Jing, Beijing Polytechnic Univ. (China)
Da-wen Pang, Beijing Polytechnic Univ. (China)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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