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Proceedings Paper

Raman scattering characterization of direct gap Si/Ge superlattices
Author(s): Julian Darryn White; Michael A. Gell; Gerhard Fasol; C. J. Gibbings; C. G. Tuppen
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Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24403
Show Author Affiliations
Julian Darryn White, Cavendish Lab./Univ. of Cambridge (United Kingdom)
Michael A. Gell, British Telecom Research Labs. (United Kingdom)
Gerhard Fasol, Cavendish Lab./Univ. of Cambridge (United Kingdom)
C. J. Gibbings, British Telecom Research Labs. (United Kingdom)
C. G. Tuppen, British Telecom Research Labs. (United Kingdom)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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