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Proceedings Paper

Raman scattering characterization of direct gap Si/Ge superlattices
Author(s): Julian Darryn White; Michael A. Gell; Gerhard Fasol; C. J. Gibbings; C. G. Tuppen
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Paper Abstract

STRACT We use Raman scattering to investigate direct gap Si/Ge superlattices for which the Si layers are in the form of biatomic sheets. We find a characteristic signal arising from the presence of the biatomic Si sheets. A range of samples have been investigated and 3-dimensional lattice dynamical calculations have been performed which pinpoint the Si layers as the origin of the signal. We illustrate how the signal may be used to characterise the quality of for example (Si)2/(Ge)6 superlattices grown at various substrate temperatures.

Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24403
Show Author Affiliations
Julian Darryn White, Cavendish Lab./Univ. of Cambridge (United Kingdom)
Michael A. Gell, British Telecom Research Labs. (United Kingdom)
Gerhard Fasol, Cavendish Lab./Univ. of Cambridge (United Kingdom)
C. J. Gibbings, British Telecom Research Labs. (United Kingdom)
C. G. Tuppen, British Telecom Research Labs. (United Kingdom)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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