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Proceedings Paper

Optical properties of short-period Si/Ge superlattices grown on (001) Ge studied with photoreflectance
Author(s): Ulrich Menczigar; Michael J. Dahmen; Reinhard Zachai; K. Eberl; Gerhard Abstreiter
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Paper Abstract

Si/Ge superlattices provide the possibility to create a novel direct band gap semiconductor. The energies and oscillator strength of interband transitions are strongly affected by strain individual layer thicknesses and superlattice periodicity. We report on photoreflectance (PR) studies of SimGen superattices with a layer thickness ratio m/n1/3 and period lengths of 8 12 and 16 monolayers. Between 1. 9 and 2. 5 eV transitions which are related to the E1 gap are observed for all samples. In the infrared region between 0. 9 and 1. 2 eV superlattice induced interband transitions are observed for Si2Ge6.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24402
Show Author Affiliations
Ulrich Menczigar, Walter Schottky Institut/Technische Univ. Muenchen (Germany)
Michael J. Dahmen, Max-Planck-Institut fuer Festkoerperforschung (Austria)
Reinhard Zachai, Daimler Benz Research Ctr. (Germany)
K. Eberl, Walter Schottky Institut/Technische Univ. Muenchen (Germany)
Gerhard Abstreiter, Walter Schottky Institut/Technische Univ. Muenchen (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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