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Proceedings Paper

Raman scattering determination of nonpersistent optical control of electron density in a heterojunction
Author(s): David Robert Richards; Gerhard Fasol; Klaus H. Ploog
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Paper Abstract

We show that electronic Raman scattering measurements of the intrasubband plasmon dispersion in a GaAs/A1GaAs heterojunction is a viable contactless optical method for the determination of sheet carrier density of the two-dimensional electron gas. We demonstrate non-persistent optical control of the carrier density by a dynamic charge transfer effect: from Raman measurements of the plasmon we directly determine the change in carrier concentration with excess illumination.

Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24399
Show Author Affiliations
David Robert Richards, Cavendish Lab./Cambridge Univ. (United Kingdom)
Gerhard Fasol, Cavendish Lab./Cambridge Univ. (United Kingdom)
Klaus H. Ploog, Max-Planck-Institut fuer Festkoerperforschung (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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