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Proceedings Paper

Far-IR studies of moderately doped molecular beam epitaxy grown GaAs on Si(100)
Author(s): Stefan Morley; Thomas Eickhoff; Dietrich R. T. Zahn; W. Richter; D. Woolf; David I. Westwood; R. H. Williams
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Paper Details

Date Published: 1 March 1991
PDF: 10 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24397
Show Author Affiliations
Stefan Morley, RWTH Aachen (Germany)
Thomas Eickhoff, RWTH Aachen (Germany)
Dietrich R. T. Zahn, Technische Univ. Berlin (Germany)
W. Richter, Technische Univ. Berlin (Germany)
D. Woolf, College of Cardiff/Univ. of Wales (United Kingdom)
David I. Westwood, College of Cardiff/Univ. of Wales (United Kingdom)
R. H. Williams, College of Cardiff/Univ. of Wales (United Kingdom)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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