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Proceedings Paper

Band structure and optical properties of silicon carbide
Author(s): Vladimir I. Gavrilenko; Sergey I. Frolov
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Paper Abstract

Silicon carbide is an interesting high-temperature large band gap semiconquctor. it ispromising as a basical material for optoelectronic devices . The optical properties of SiC have been studied by several authors. The absrption coefficient of SiC 6H3 has been measured by Choyke and Patrick up to 4.9 eV and by Makarov to 5.8 eV. Reflection spectra of 6H, 15R, and 3C SiC in the range 3.0 to 13 eV have been stidied in . The optical constants of SiC 6H have been measured by reflectivity in the range 4 to 25 eV, The energies of direct optical transitions between subbands in the conduction band, resulting from confinement in a one dimensional superI,at,,tice, have been measured in8sveral polytypes of SiC by absorption ' and electroreflection (ER) ' The electron energy band structure (85) of SiC of1he1 halerite structure (3C SiC) has been calculated by several 1tu4r2 ' . BS of wurtzite modification of SiC have been calculated 1 in ' ' ' for 2H iC. BS of 4H and 6H SiC has been calculated by the semiempirical pseudopotential method at high-symmetry points of the Brillouin zone (BZ). Tight binding calculations of 2H SiC show valence bands which agree with experiment, but unrealistic conductive bands due to the restriction to nearest neighbours in the Hamiltonian matrix In this work we report the electroreflectance (ER) spectra of hexagonal (4H and 6H) and cubic SiC measured in the range 1.0 to 5.6 eV. Values of direct optical gps1ave been obtained from the ER spectra using a multiple oscillator model ' . BS of SiC has been calculated by the first-principles self-consistent linear muffin-tin orbital (LMTO-ASA) method (2H, 4H, and 6H SiC) and by the semiempirical pseudopotential method (3C SiC). Calculated BS parameters have been compared with experimental data measured in this work and those available in the literature.

Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24395
Show Author Affiliations
Vladimir I. Gavrilenko, Institute of Semiconductors and Max-Planck-Institut fur Fest (Ukraine)
Sergey I. Frolov, Institute of Semiconductors (Ukraine)

Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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