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Proceedings Paper

Optical properties of molecular beam epitaxy grown ZnTe epilayers
Author(s): Gotthard Kudlek; Nazmir Presser; Juergen Gutowski; David L. Mathine; Masakazu Kobayashi; Robert L. Gunshor
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Paper Abstract

Systematic comparative studies of the optical properties in the excitonic energy regime of MBE-grown ZnTe/GaAs and ZnTe/GaSb epilayers are presented. For these different substrate materials we investigate the influence of strain between layer and substrate the possible incorporation of impurities the electronic structure of the impurity-related exciton complexes and biexciton recombination processes at high-density excitation.

Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24393
Show Author Affiliations
Gotthard Kudlek, Technische Univ. Berlin (Germany)
Nazmir Presser, Technische Univ. Berlin (Germany)
Juergen Gutowski, Technische Univ. Berlin (Germany)
David L. Mathine, Purdue Univ. (United States)
Masakazu Kobayashi, Purdue Univ. (United States)
Robert L. Gunshor, Purdue Univ. (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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