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Proceedings Paper

Differentiation of the nonradiative recombination properties of the two interfaces of molecular beam epitaxy grown GaAs-GaAlAs quantum wells
Author(s): Bernard Sermage; Jean Michel Gerard; Lorenzo Bergomi; Jean Yves Marzin
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Paper Abstract

The repartition ofnonradiative recombination centers density in a quantum well has been tested by timeresolved luminescence in samples containing an InAs plane inside a 16 nm wide GaAs well in Ga7AL3As. The results show unambiguously that more non radiative centers are located near the first grown interface. The non radiative carriers lifetime () vary between 4 ns when the InAs monolayer is close to the inverted interface and 8 ns when it is near the direct one.

Paper Details

Date Published: 1 March 1991
PDF: 5 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24392
Show Author Affiliations
Bernard Sermage, Lab. de Bagneux/CNET (France)
Jean Michel Gerard, Lab. de Bagneux/CNET (France)
Lorenzo Bergomi, Lab. de Bagneux/CNET (France)
Jean Yves Marzin, Lab. de Bagneux/CNET (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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