Share Email Print
cover

Proceedings Paper

Photocurrent response to picosecond pulses in semiconductors: application to EL2 in gallium arsenide
Author(s): Michel Pugnet; Jacques H. Collet; Laurent Nardo
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Infrared photoexcitation of a SI GaAs sample generates photocurrents whose kinetics are interpreted in terms of photogeneration and thermal decay * * of the metastable state EL2 . The thermal deexcitation rate of EL2 is measured in the temperature range (240 K T 360 K). We demonstrate its thermally activated origin and we obtain : r 3. 3 lOt'' exp - O. 30/kT. Picosecond pulse and probe experiments are performed on the same sample. We observe an optical memory effect related to the optical generation of the * metastable state EL2 at room temperature. This effect persists over more than 10 ns.

Paper Details

Date Published: 1 March 1991
PDF: 13 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24390
Show Author Affiliations
Michel Pugnet, Lab. de Physique des Solides/CNRS (France)
Jacques H. Collet, Lab. de Physique des Solides/CNRS (France)
Laurent Nardo, Lab. de Physique des Solides/CNRS (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

© SPIE. Terms of Use
Back to Top