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Proceedings Paper

Effects of TMSb/TEGa ratios on epilayer properties of gallium antimonide grown by low-pressure MOCVD
Author(s): Tong S. Wu; Yan-Kuin Su; Fuh Shyang Juang; N. Y. Li; K. J. Gan
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Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24388
Show Author Affiliations
Tong S. Wu, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Fuh Shyang Juang, National Cheng Kung Univ. (Taiwan)
N. Y. Li, National Cheng Kung Univ. (Taiwan)
K. J. Gan, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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