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Proceedings Paper

Analysis and control of semiconductor crystal growth with reflectance-difference spectroscopy and spectroellipsometry
Author(s): David E. Aspnes
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Paper Abstract

In the 1990s increasing emphasis will be placed on improving OEIC capabilities by better understanding semiconductor crystal growth processes and by monitoring and controlling semiconductor crystal growth in real time. The noninvasive nondestructive characteristics of optical probes makes them particularly attractive for these purposes. Here I briefly discuss optical approaches directed toward achieving these goals and present some examples that illustrate work in this area currently being done at Beilcore.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24379
Show Author Affiliations
David E. Aspnes, Bell Communications Research (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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