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Proceedings Paper

Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials
Author(s): Markus Pessa; T. Hakkarainen; Jari Keskinen; Keijo Rakennus; Arto K. Salokatve; Guodong Zhang; Harry M. Asonen
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Paper Abstract

This paper deals with growth of GaAs InP and their ternaries quaternaries and heterostructures by the gas-source molecular beam epitaxy (GSMBE) method. Epilayer qualities are discussed and compared with those obtained by other methods. Some problems related to growth of layers and interfaces are discussed in detail. Properties of lasers photodetectors and optical modulators fabricated by GSMBE are presented.

Paper Details

Date Published: 1 March 1991
PDF: 14 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24378
Show Author Affiliations
Markus Pessa, Tampere Univ. of Technology (Finland)
T. Hakkarainen, Tampere Univ. of Technology (Finland)
Jari Keskinen, Tampere Univ. of Technology (Finland)
Keijo Rakennus, Tampere Univ. of Technology (Finland)
Arto K. Salokatve, Tampere Univ. of Technology (Finland)
Guodong Zhang, Tampere Univ. of Technology (Finland)
Harry M. Asonen, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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