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Proceedings Paper

Current trends and issues for low-damage dry etching of optoelectronic devices
Author(s): Evelyn L. Hu
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Paper Abstract

STRACT Dry etching techniques such as reactive ion etching (RIE) have found wide applicability in the fabrication of optoelectronic devices. However as requirements on device performance become more stringent and as devices incorporate the low dimensional quantum wires or dots issues such as materials selectivity controlled etching through thin layers fidelity of pauern transfer and etch-induced damage assume greater importance. This paper reviews recent work on the assessment of etch-induced damage including cathodoluminescence of multiple quantum wells and Raman spectroscopy. In addition to ion beam-induced damage created in the substrate chemical modification of the etched surfaces may compromise optoelectronic device performance. Some low-damage dry etching alternatives to RIE are discussed such as radical beam/ion beam etching (RBIBE) and thermally enhanced etching.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24377
Show Author Affiliations
Evelyn L. Hu, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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