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Proceedings Paper

Fabrication technology of strained layer heterostructure devices
Author(s): Marc Van Rossum
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Paper Abstract

The paper reviews some recent developments in fabrication technology for nanoscale devices. The latter require a combination of high resolution lithography shallow electrical contacts and highly controllable patterning techniques. The main objective to be met is a precise geometrical definition of the structures (at the nanometer scale) without loss of electrical performance. Applications are discussed in the field of ultra-submicron HEMTs and resonant tunneling devices.

Paper Details

Date Published: 1 March 1991
PDF: 10 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24372
Show Author Affiliations
Marc Van Rossum, IMEC (Belgium)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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