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Proceedings Paper

Some new insights in the physics of quantum-well devices
Author(s): Raphael Tsu
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Paper Abstract

The optical response of conduction electrons in a superlattice is presented. The time response of electron tunneling through a double barrier is examined with the time dependent Schroedinger''s equation. The energy states of a silicon quantuirt box are calculated with the use of a variational procedure for a spherical box. The regions of applicability of the band-model and the hoppingmodel for negative differential conductivity are discussed. And finally sonie problems involv ing phase rardoraization and inelastic scatterings with the presence of attractive o repulsive elastic scattering centers in a confined re gion are discussed.

Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24369
Show Author Affiliations
Raphael Tsu, Univ. of North Carolina/Charlotte (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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