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Proceedings Paper

Device concepts for SiGe optoelectronics
Author(s): Erich Kasper; Hartmut Presting
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Paper Abstract

Strain induced band gap decrease and therefore enhanced near infrared absorption were demonstrated in the past with SiGe heterostructure receiver devices. Quasidirect transitions are expected for ultrathin SiGe superlattices because of zone folding effects from the superlattice periodicity. We report about experimental results from strained layer structures about device demonstrators and about device relevant theoretical predictions. Basic concepts of SiGe optoelectronic devices are explained and possible routes of integration with Si microelectronics are discussed.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24368
Show Author Affiliations
Erich Kasper, Daimler Benz Research Institute (Germany)
Hartmut Presting, Daimler Benz Research Institute (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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