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Proceedings Paper

Recent progress on research of materials for optoelectronic device applications in China
Author(s): Lianhui Chen; Mei-Ying Kong; Yi-Ming Wang
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Paper Abstract

We describe the research activities of materials for optoelectronic device applications in China we laid emphasis on study of growth technology characteristics and physical mechanism of compound semiconductors with the structure of superlattice or quantum well by using home-made MBE or MOCVD systerms. Some performances of our optoelectronic devices based on these materials are also eseed

Paper Details

Date Published: 1 March 1991
PDF: 14 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24364
Show Author Affiliations
Lianhui Chen, Institute of Semiconductors (China)
Mei-Ying Kong, Institute of Semiconductors (China)
Yi-Ming Wang, Beijing Polytechnic Univ. (China)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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