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Proceedings Paper

Transient of electrostatic potential at GaAs/AlAs heterointerfaces characterized by x-ray photoemission spectroscopy
Author(s): Kazuhiko Hirakawa; Y. Hashimoto; Toshiaki Ikoma
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Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24361
Show Author Affiliations
Kazuhiko Hirakawa, Univ. of Tokyo (Japan)
Y. Hashimoto, Univ. of Tokyo (Japan)
Toshiaki Ikoma, Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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