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Proceedings Paper

Observation of tunneling emission from a single-quantum-well using deep-level transient spectroscopy
Author(s): Xavier Letartre; Didier Stievenard
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Paper Abstract

The development Il-VI semiconductors for the preparation of devices, when compared with Si and the III-Vs, has been much slower and has been restricted by a number of factors. One of the more important of these, at least until the mideighties has been the lack of suitable low temperature epitaxial growth technologies. The main problems that are being addressed in order to hasten the development of Il-Vis concern firstly the need to improve crystalline quality by growth at reduced temperatures(1) and secondly, in the case of the wide band gap Il-Vis, the need to achieve both p and n-type doping that is suitable for device applications. Advances in the last few years in MOVPE, MBE(2) and related epitaxial techniques such as MOMBE, CBE and ALE-MOVPE now offer scope for overcoming these problems. With the exception of MBE these technologies rely on the use of organometallic precursors and these materials are playing an increasingly important role in the evolution and development of the Il-Vis. They represent the key to the future. The purpose of this paper is to review and rationalise the status of current developments in precursor research and then to consider whether these developments are appropriate to solving the problems that are now evident.

Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24359
Show Author Affiliations
Xavier Letartre, Lab. de Physique des Solides/CNRS (France)
Didier Stievenard, Lab. de Physique des Solides/CNRS (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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