Share Email Print
cover

Proceedings Paper

Resonant tunneling in microcrystalline silicon quantum box diode
Author(s): Raphael Tsu; Qui-Yi Ye; Edward H. Nicollian
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

STRACT Resonant tunneling in threedimensionally quantum confined (3DQC) microcrystalline silicon surrounded by amorphousSi02(aSiO barriers is experimentally observed. Unlike quantum confinement in lower dimenstons charge accumulation in 3DQC silicon box results in large shifts of the discrete energy states with conductancegate voltage measurements.

Paper Details

Date Published: 1 March 1991
PDF: 4 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24358
Show Author Affiliations
Raphael Tsu, Univ. of North Carolina/Charlotte (United States)
Qui-Yi Ye, Univ. of North Carolina/Charlotte (United States)
Edward H. Nicollian, Univ. of North Carolina/Charlotte (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

© SPIE. Terms of Use
Back to Top