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Proceedings Paper

Shadow masked growth for the fabrication of photonic integrated circuits
Author(s): Piet M. A. Demeester; Ingrid Moerman; Youcai Zhu; Peter Van Daele; J. Thomson
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Paper Abstract

The present study reports new research results of a dislocation structure of single crystalline SiC layers grown by CVD on Sisubstrates without a buffer layer. Connection between variation in dislocation 'structure and the conditions of growing has been studied by method of X-ray differential diffractometry. It is demonstrated, the best quality layers, produced at 1100°C and low flow rate of reagent gases, have a block structure, block sizes being approximately 500A.

Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24356
Show Author Affiliations
Piet M. A. Demeester, Univ. of Gent (Belgium)
Ingrid Moerman, Univ. of Gent (Belgium)
Youcai Zhu, Univ. of Gent (Belgium)
Peter Van Daele, Univ. of Gent (Belgium)
J. Thomson, Plessey Research Caswell (United Kingdom)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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