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Proceedings Paper

Semiconductor-doped glass as a nonlinear material
Author(s): Burkhard Speit; K. E. Remitz; Norbert N. Neuroth
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Paper Abstract

We report on a systematic study of the growth of high quality films of GaAs on Si substrates for co-integration in optical interconnects. The effort was geared towards optimizing substrate preparation, growth time parameters and post-growth treatment for best active layer properties. In particular, the study of growth involved optimization of chemical substrate preparation, study of silicon substrate orientation, ex-situ and in-situ treatment, as well as multi- layer and silicon buffer layers. For quantification of film quality, a number of characterization methods were used both in-situ (RHEED, Auger) and ex-situ (Optical, Electrical (I-V, C-V, DLTS), Hall, ThM, SEM, ECP, XRD). Schottky Diodes, p-n heterojunctions and MSM Photoconductors/ Photodetectors (PC/PD's) were fabricated on these films. A comprehensive study was performed on the PC/PD's, chosen as the test optoelectronic device, for maximum photosensitivity and minimum leakage current. The results allow us to claim that we have achieved a technology that leads to heteroepitaxial GaAs/Si films which compare to homoepitaxial GaAs/GaAs within about 10% in performance in most areas relevant to optoeleclxonic devices. In addition, a reduction of a processing temperature by 100°C was achieved.

Paper Details

Date Published: 1 March 1991
PDF: 4 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24355
Show Author Affiliations
Burkhard Speit, Schott Glaswerke (Germany)
K. E. Remitz, Schott Glaswerke (Germany)
Norbert N. Neuroth, Schott Glaswerke (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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