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Proceedings Paper

Attainment of high D* at room temperature via gate-modulated detector interface
Author(s): Lester J. Kozlowski; Kadri Vural; William E. Kleinhans; T. Liu; Gregory H. Olsen; Marshall J. Cohen
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Paper Abstract

We report the performance of InGaAs and HgCdTe FPAs using multiplexing readouts having gate modulated interface to the infrared detectors. Gate modulation enables extremely high sensitivity via self-adjusting current gain and concomitant high transimpedance. At operating temperatures where the detector current was dominated by photocurrent, gate modulation current gain is > 40,000 and yield input- referred read noise of < 2 e-. Key highlights include D* exceeding 1013 Jones at room temperature and 1016 Jones at 170 K with a 1.68 micrometers InGaAs FPA.

Paper Details

Date Published: 26 June 1996
PDF: 10 pages
Proc. SPIE 2745, Infrared Readout Electronics III, (26 June 1996); doi: 10.1117/12.243538
Show Author Affiliations
Lester J. Kozlowski, Rockwell International Science Ctr. (United States)
Kadri Vural, Rockwell International Science Ctr. (United States)
William E. Kleinhans, Valley Oak Semiconductor, Inc. (United States)
T. Liu, Valley Oak Semiconductor, Inc. (United States)
Gregory H. Olsen, Sensors Unlimited, Inc. (United States)
Marshall J. Cohen, Sensors Unlimited, Inc. (United States)

Published in SPIE Proceedings Vol. 2745:
Infrared Readout Electronics III
Eric R. Fossum, Editor(s)

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