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Proceedings Paper

CMOS/CdHgTe hybrid technology for long-linear arrays with time delay and integration and element deselection
Author(s): C. P. Arthurs; Ian M. Baker; Graham J. Crimes; S. Bains; D. C. Murray
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Paper Abstract

This paper discusses the technology used by GMIRL for high performance long linear arrays based on CdHgTe/CMOS hybrid multiplexers. Modern silicon processes allow the realization of a high degree of functionality within focal plane detectors. GMIRL have used this enhanced functionality to facilitate the deselection of defective elements within a diode array and provide time delay and integration. Two design approaches have been evaluated leading to the design and manufacture of high performance arrays for imaging applications. The resulting detector allows the enhancement of the signal to noise ratio at low IR flux levels and has a low overall power consumption, while requiring the minimum of real time correction for nonuniformities. The design can be readily adapted to suit arrays of varying length. The infrared sensor technology is based on CdHgTe (CMT) material grown by a tellurium rich, liquid phase epitaxy (LPE) process. Lateral collection photodiode arrays are fabricated within this material as a silicon CMT hybrid structure.

Paper Details

Date Published: 27 June 1996
PDF: 13 pages
Proc. SPIE 2744, Infrared Technology and Applications XXII, (27 June 1996); doi: 10.1117/12.243487
Show Author Affiliations
C. P. Arthurs, GEC-Marconi Infrared Ltd. (United Kingdom)
Ian M. Baker, GEC-Marconi Infrared Ltd. (United Kingdom)
Graham J. Crimes, GEC-Marconi Infrared Ltd. (United Kingdom)
S. Bains, GEC-Marconi Infrared Ltd. (United Kingdom)
D. C. Murray, GEC-Marconi Infrared Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 2744:
Infrared Technology and Applications XXII
Bjorn F. Andresen; Marija S. Scholl, Editor(s)

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