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Proceedings Paper

Molecular beam epitaxy GaAs on Si: material and devices for optical interconnects
Author(s): Paul Panayotatos; Alexandros Georgakilas; Jean-Loic Mourrain; Aristos Christou
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Paper Abstract

(100)CdZnTe epilayers are grown by hot wall beam epitaxy (HWBE) on (100) GaAs. The CdZnTe epilayers are used as substrates for the growth of Hg1_CdTe (x = 0.27 - 0.32) layers by closed space vapor phase epitaxy. The Hg1CdTe layers have an x-ray rocking curve width of 59 10 arc sec measured across a 1 inch wafer. The layers are p-type with a hole concentration of 2 - 4.1016crri3 and a mobility of 250 - 350cm2/Vs at 77 K. Photoconductivity decay measurements give the lifetime of excess carriers which is governed by recombination via Shockley-Read centres at T < 250 K. Linear arrays of planar, photovoltaic detectors are fabricated by implantation of B ions. The elements size is 50 50,arn2, the space between the elements is 50prn. The R0A product, the responsivity and the cut-off wavelength of the p-n junction are measured at 192 K. The variation of the responsivity across a 16 element array is less than 4 %, the cut-off wavelength varies between 4.77,um and 4.83μm.

Paper Details

Date Published: 1 March 1991
PDF: 10 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24348
Show Author Affiliations
Paul Panayotatos, Rutgers Univ. and Foundation for Research and Technology/Hel (United States)
Alexandros Georgakilas, Foundation for Research and Technology/Hellas (United States)
Jean-Loic Mourrain, Foundation for Research and Technology/Hellas (United States)
Aristos Christou, Univ. of Maryland/College Park (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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