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Proceedings Paper

Direct MOVPE growth of HgCdTe on Si substrates for long-wavelength infrared photodiodes
Author(s): Kenji Maruyama; Hiroji Ebe; Hironori Nishino; T. Okamoto; S. Murakami; Tamio Saito; Y. Nishijima; Hideo Wada; Mitsuhiro Nagashima; Yashiroh Nogami; Kunihiro Tanikawa; Hiromichi Shirahata
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Paper Abstract

Antiphase- and twinning-free (111)B HgCdTe layers were directly grown on (100) Si substrates by metalorganic vapor phase epitaxy (MOVPE). The quality of the HgCdTe layers was evaluated for long-wavelength infrared (LWIR) photodiodes. Direct growth of (111)B CdTe on (100) Si tended to contain antiphase and twinning due to a lack of polarity in the Si crystal structure. To polarize the nonpolar Si surface, we adsorbed polar molecules on Si surface with metalorganic tellurium (Te). A metalorganic tellurium adsorption and annealing technique is effective for growing high quality CdTe buffer layers on Si substrates. This technique eliminates antiphase domains and prevents twinning. The crystallinity of the Hg1-xCdxTe (x equals 0.22 to 0.24) layers grown on Si was evaluated. We have achieved 119 arc sec. full width at half maximum (FWHM) by x-ray analysis and 1.5 multiplied by 106 cm-2 etch pit density (EPD) for a 17-micrometer-thick layer. LWIR photodiodes were fabricated from the p-type (111)B HgCdTe layers on (100) Si substrates using planer technology. The n-type regions, formed by boron ion implantation, were 50 micrometer by 75 micrometer by design. A quantum efficiency of 42% was obtained at a cutoff wavelength of 9.0 micrometer at 78 K. The zero bias resistance-area product (R0A) was 8.9 multiplied by 101 (Omega) cm2. We were able to increase the R0A and quantum efficiency with MOVPE grown HgCdTe/Si wafers by 50% of those obtained with liquid phase epitaxy (LPE) grown HgCdTe/CdZnTe.

Paper Details

Date Published: 27 June 1996
PDF: 9 pages
Proc. SPIE 2744, Infrared Technology and Applications XXII, (27 June 1996); doi: 10.1117/12.243468
Show Author Affiliations
Kenji Maruyama, Fujitsu Labs. Ltd. (Japan)
Hiroji Ebe, Fujitsu Labs. Ltd. (Japan)
Hironori Nishino, Fujitsu Labs. Ltd. (Japan)
T. Okamoto, Fujitsu Labs. Ltd. (Japan)
S. Murakami, Fujitsu Labs. Ltd. (Japan)
Tamio Saito, Fujitsu Labs. Ltd. (Japan)
Y. Nishijima, Fujitsu Labs. Ltd. (Japan)
Hideo Wada, Japan Defense Agency (Japan)
Mitsuhiro Nagashima, Japan Defense Agency (Japan)
Yashiroh Nogami, Japan Defense Agency (Japan)
Kunihiro Tanikawa, Japan Defense Agency (Japan)
Hiromichi Shirahata, Japan Defense Agency (Japan)


Published in SPIE Proceedings Vol. 2744:
Infrared Technology and Applications XXII
Bjorn F. Andresen; Marija S. Scholl, Editor(s)

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