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Proceedings Paper

Performance improvement of HgCdTe photoconductive detectors
Author(s): Masahiko Sano; Keiji Miyamoto; Naoki Oda; Y. Fujino
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Paper Abstract

Highly sensitive HgCdTe infrared photoconductive detectors have been developed for detecting 5 - 8 micrometer wavelength band. HgCdTe crystals were grown with the solid state recrystallization method and Cd composition was adjusted to 23.5%. The detectors possess an optical mask and asymmetric electrodes. The responsivity of the detectors depends on bias current direction. Higher responsivity was obtained with bias current flowing from a wide electrode to a narrow one. This responsivity value is 5 to 10 times larger than that of a standard detector which has symmetric electrodes and no optical mask. One of the new highly sensitive detectors was installed in a thermal imaging system and was found to be applicable to non-destructive diagnoses of buildings.

Paper Details

Date Published: 27 June 1996
PDF: 12 pages
Proc. SPIE 2744, Infrared Technology and Applications XXII, (27 June 1996); doi: 10.1117/12.243450
Show Author Affiliations
Masahiko Sano, NEC Corp. (Japan)
Keiji Miyamoto, NEC Corp. (Japan)
Naoki Oda, NEC Corp. (Japan)
Y. Fujino, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 2744:
Infrared Technology and Applications XXII
Bjorn F. Andresen; Marija S. Scholl, Editor(s)

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