Share Email Print
cover

Proceedings Paper

Performance improvement of HgCdTe photoconductive detectors
Author(s): Masahiko Sano; Keiji Miyamoto; Naoki Oda; Y. Fujino
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Highly sensitive HgCdTe infrared photoconductive detectors have been developed for detecting 5 - 8 micrometer wavelength band. HgCdTe crystals were grown with the solid state recrystallization method and Cd composition was adjusted to 23.5%. The detectors possess an optical mask and asymmetric electrodes. The responsivity of the detectors depends on bias current direction. Higher responsivity was obtained with bias current flowing from a wide electrode to a narrow one. This responsivity value is 5 to 10 times larger than that of a standard detector which has symmetric electrodes and no optical mask. One of the new highly sensitive detectors was installed in a thermal imaging system and was found to be applicable to non-destructive diagnoses of buildings.

Paper Details

Date Published: 27 June 1996
PDF: 12 pages
Proc. SPIE 2744, Infrared Technology and Applications XXII, (27 June 1996); doi: 10.1117/12.243450
Show Author Affiliations
Masahiko Sano, NEC Corp. (Japan)
Keiji Miyamoto, NEC Corp. (Japan)
Naoki Oda, NEC Corp. (Japan)
Y. Fujino, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 2744:
Infrared Technology and Applications XXII
Bjorn F. Andresen; Marija S. Scholl, Editor(s)

© SPIE. Terms of Use
Back to Top