Share Email Print
cover

Proceedings Paper

Monolithic epitaxial IV-VI compound IR-sensor arrays on Si substrates for the SWIR, MWIR and LWIR range
Author(s): Hans Zogg; Jiri Masek; Clau Maissen; Taizo J. Hoshino; Stefan Blunier; A. N. Tiwari
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Fabrication of infrared sensor arrays in epitaxial lead-salt layers on Si are described with PbS, PbTe and Pb1SnSe for the SWIR, MWIR and LWIR range. Epitaxy of the 2-3 jim thick layers is obtained with the aid of a 200 nm thick stacked CaF2-BaF2 buffer. Linear arrays with 66 elements were fabricated. For the LWIR range, an array with 10.5 jim cut-off wavelength at 77K and spread below 0. 1 im demonstrates the superior homogeneity achievable with IV-VI materials compared to MCT. The mean quantum efficiency of this array is 59% with 3% standard deviation of the individual sensors.

Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24344
Show Author Affiliations
Hans Zogg, Swiss Federal Institute of Technology (Switzerland)
Jiri Masek, Swiss Federal Institute of Technology (Switzerland)
Clau Maissen, Swiss Federal Institute of Technology (Switzerland)
Taizo J. Hoshino, Swiss Federal Institute of Technology (Switzerland)
Stefan Blunier, Swiss Federal Institute of Technology (Switzerland)
A. N. Tiwari, Swiss Federal Institute of Technology (Switzerland)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

© SPIE. Terms of Use
Back to Top