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Proceedings Paper

Fabrication of high-radiance LEDs by epitaxial lift-off
Author(s): Ivan K.A. Pollentier; Ann Ackaert; Peter M. De Dobbelaere; Luc Buydens; Peter Van Daele; Piet M. A. Demeester
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Paper Abstract

Fully processed A1GaAs/GaAs LEDs were lifted off their GaAs substrates and grafted to various host substrates. Due to a metallic back reflector beneath the epitaxial structure, the LED output power was 2 to 3 times increased compared to LEDs still on a GaAs substrate. Output power and spectral responses were significantly influenced by the thermal properties of the host material.

Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24339
Show Author Affiliations
Ivan K.A. Pollentier, Univ. of Gent (Belgium)
Ann Ackaert, Univ. of Gent (Belgium)
Peter M. De Dobbelaere, Univ. of Gent (Belgium)
Luc Buydens, Univ. of Gent (Belgium)
Peter Van Daele, Univ. of Gent (Belgium)
Piet M. A. Demeester, Univ. of Gent (Belgium)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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