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Proceedings Paper

High-performance metal/SiO2/InSb capacitor fabricated by photoenhanced chemical vapor deposition
Author(s): Tai Ping Sun; Si-Chen Lee; Kou-Chen Liu; Yen-Ming Pang; Sheng-Jehn Yang
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Paper Abstract

The high performance AuCr/Si02/InSb metal-oxidesemiconductor capacitor was fabricated successfully using photo-enhanced chemical vapor deposition. The 1200 A thick Si02 layer was deposited on the InSb substrate at the temperature below 200 °C. Their electrical and structural properties were analyzed by capacitance-voltage and Auger electron spectroscopy, respectively. The capacitance-voltage results show that the optimal growth temperature of Si02 is 150 °C at which the fiat-band voltage of the capacitor is close to ideal and slow interface state density is less than 5 x 1O'° cm2. For Si02 deposited at lower temperature, although the flatband voltage and interface state are poorer, the subsequent thermal annealing at 150 °C for 12 hours improves both quantities to the level as the optimal condition. However, for Si02 deposited at higher temperature (190 °C), the flatband voltage shifts to -4 V and the slow state density increases to 1.1 x 1011 cm2. It is found from Auger depth profile that whatever the deposition temperature was a Si-rich region followed by an oxygen-rich region was formed at the 5i02/InSb interface. These observations are shown to be consistent with the electrical characteristics of the capacitor.

Paper Details

Date Published: 1 March 1991
PDF: 5 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24333
Show Author Affiliations
Tai Ping Sun, National Taiwan Univ. (Taiwan)
Si-Chen Lee, National Taiwan Univ. (Taiwan)
Kou-Chen Liu, Chung Shan Institute of Science and Technology (Taiwan)
Yen-Ming Pang, Chung Shan Institute of Science and Technology (Taiwan)
Sheng-Jehn Yang, Chung Shan Institute of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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