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Proceedings Paper

Oxide removal from GaAs(100) by atomic hydrogen
Author(s): Juergen Alois Schaefer; V. Persch; S. Stock; Thomas Allinger; A. Goldmann
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Paper Abstract

We used molecular hydrogen in the presence of a hot tungsten filament to clean GaAs(100) wafers after inserton into an UHV4 chamber. The H2-pressure was varied between lxlO torr and 5x10 torr. During exposure the sample remained either at room temperature or at elevated temperatures up to 600 K. The mechanism we suggest for the removal of oxygen and carbon is the formation of chemical products like H90 and CH4 and their subsequent desorption. Also a build-up of gaflium- and arsenic-hydrides and their desorption is possible. After cleaning a clear ixi-LEED pattern indicates a rather well-ordered surface.

Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24332
Show Author Affiliations
Juergen Alois Schaefer, Univ. Kassel (Germany)
V. Persch, Univ. Kassel (Germany)
S. Stock, Univ. Kassel (Germany)
Thomas Allinger, Univ. Kassel (Germany)
A. Goldmann, Univ. Kassel (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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