Share Email Print
cover

Proceedings Paper

Behavior of amorphous semiconductors As2S3 layers after photon, electron, or x-ray exposures
Author(s): Peter Guttmann; Gentsho V. Danev; Erintche M. Spassova; Sergey V. Babin
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The changes in the chemical and optical properties of the thin (8001200 A) layers of As2S3 after exposure with photons (1 to 40 J/cm2) electrons (3. 2. 1O to 1. 28 102 C/cm2) or soft Xradiation (0. 1 to 1 1 1 . 0 J/cm2) are studied. The structural changes occurring after exposure lead to changes in the alkaline stability of the exposed regions. The optimum exposure doses for As 25 3 layers are determined allowing their use for ebeam and xray lithographic purposes. The high stability of the layers to a great number of acid etchers used in microelectronic technologies and the stability in TUE conditions in oxygen medium make the layers accomplishing microlithographic tasks.

Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24327
Show Author Affiliations
Peter Guttmann, Univ. Goettingen (Germany)
Gentsho V. Danev, Central Lab. of Photoprocesses (Bulgaria)
Erintche M. Spassova, Central Lab. of Photoprocesses (Bulgaria)
Sergey V. Babin, Institute of Problems of Microelectronic Technologies (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

© SPIE. Terms of Use
Back to Top