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Proceedings Paper

Behavior of amorphous semiconductors As2S3 layers after photon, electron, or x-ray exposures
Author(s): Peter Guttmann; Gentsho V. Danev; Erintche M. Spassova; Sergey V. Babin
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Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24327
Show Author Affiliations
Peter Guttmann, Univ. Goettingen (Germany)
Gentsho V. Danev, Central Lab. of Photoprocesses (Bulgaria)
Erintche M. Spassova, Central Lab. of Photoprocesses (Bulgaria)
Sergey V. Babin, Institute of Problems of Microelectronic Technologies (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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