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Proceedings Paper

Photoluminescence and surface photovoltaic spectra of strained InP on GaAs by MOCVD
Author(s): Weihua Zhuang; Chaoyang Chen; Da Teng; Jinzhong Yu; Yuzhang Li
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Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24325
Show Author Affiliations
Weihua Zhuang, Institute of Semiconductors and Univ. of Science and Technol (China)
Chaoyang Chen, Institute of Semiconductors and Xiamen Univ. (China)
Da Teng, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)
Yuzhang Li, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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