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Proceedings Paper

Epitaxial growth and photoluminescence investigations of InP/InAs quantum well grown by hydride vapor phase epitaxy
Author(s): Henri Banvillet; E. Gil-Lafon; A. M. Vasson; R. Cadoret; A. Tabata; Taha Benyattou; Gerard Guillot
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Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24324
Show Author Affiliations
Henri Banvillet, Univ. Blaise Pascal-Clermont-Ferrand II (France)
E. Gil-Lafon, Univ. Blaise Pascal-Clermont-Ferrand II (France)
A. M. Vasson, Univ. Blaise Pascal-Clermont-Ferrand II (France)
R. Cadoret, Univ. Blaise Pascal-Clermont-Ferrand II (France)
A. Tabata, INSA de Lyon (France)
Taha Benyattou, INSA de Lyon (France)
Gerard Guillot, INSA de Lyon (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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