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Proceedings Paper

Epitaxial growth and photoluminescence investigations of InP/InAs quantum well grown by hydride vapor phase epitaxy
Author(s): Henri Banvillet; E. Gil-Lafon; A. M. Vasson; R. Cadoret; A. Tabata; Taha Benyattou; Gerard Guillot
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Paper Abstract

InAs/InP quantum well (QW) structures are grown on InP substrates by hydride vapor phase epitaxy (HYPE) in a continuous mCi H2 HC1 flow with alternate supply of AsH3 and PH3. Photoluminescence peaks due to InAs QW are clearly detected with the higher energy ever reported (1. 23 eV) and with very good value for the full half width maximum (FHWM up to 1 3 meV). The evolution of the peak emission as a function of thickness leads us to determine a critical thickness of 7-8 ML for the InAs/InP system.

Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24324
Show Author Affiliations
Henri Banvillet, Univ. Blaise Pascal-Clermont-Ferrand II (France)
E. Gil-Lafon, Univ. Blaise Pascal-Clermont-Ferrand II (France)
A. M. Vasson, Univ. Blaise Pascal-Clermont-Ferrand II (France)
R. Cadoret, Univ. Blaise Pascal-Clermont-Ferrand II (France)
A. Tabata, INSA de Lyon (France)
Taha Benyattou, INSA de Lyon (France)
Gerard Guillot, INSA de Lyon (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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